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For the Inventor, By the Inventor

Machida, Japan

Toshikazu Ohnishi

This inventor holds 63 USPTO granted patents and 1 EPO patent, primarily in Electron-Emitting Devices (CPC class 359 ). Top assignees: Canon Kabushiki Kaisha, Nec Corporation. Active years: 1987-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshikazu Ohnishi. Retrieved from https://idiyas.com/inventor/toshikazu-ohnishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 63

% Patents Active = 84.1


Average Co-Inventor Count = 4.6

ph-index = 20

Forward Citations = 1,373(Granted Patents)

Forward Citations (Not Self Cited) = 1,276(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa, JP (1992)
  • Atsugi, JP (1990 - 1995)
  • Machida, JP (1993 - 2004)
  • Sagamihara, JP (1997 - 2005)
  • Tokyo, JP (1987 - 2010)
  • Kanagawa-ken, JP (2004 - 2010)

Company Filing History:

goldMedal62 out of 92,994 
 
Canon Kabushiki Kaisha
 patents
silverMedal1 out of 36,684 
 
Nec Corporation
 patents

Years Active: 1987-2010

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Areas of Expertise:
Electron-Emitting Device
Image-Forming Apparatus
Electron Source
Manufacturing Method
Carbon Films
Liquid Crystal Device
Display Apparatus
Particle Separation
Measuring Apparatus
Cyanine-Type Dye
Polymeric Liquid Crystal
Chiral Smectic Liquid Crystal
63 patents (USPTO):Explore Patents
1. 7758762 - Method for manufacturing an electron-emitting device with first and second carbon films (2010-07-20),
2. 7705527 - Electron-emitting device, electron source, and image-forming apparatus (2010-04-27),
3. 7348719 - Electron-emitting devices provided with a deposit between electroconductive films made of a material different from that of the electroconductive films (2008-03-25),
4. 7326097 - Method and apparatus for manufacturing image displaying apparatus (2008-02-05),
5. 7234985 - Method for manufacturing an electric emitting device with first and second carbon films (2007-06-26),
6. 7057336 - Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same (2006-06-06),
7. 6908356 - Electron-emitting device, electron source, and image-forming apparatus (2005-06-21),
8. 6890231 - Electron-emitting device, electron source, and image forming apparatus (2005-05-10),
9. 6848961 - Method and apparatus for manufacturing image displaying apparatus (2005-02-01),
10. 6824437 - Electron-emitting device, electron source, and manufacture method for image-forming apparatus (2004-11-30),
11. 6802752 - Method of manufacturing electron emitting device (2004-10-12),
12. 6780073 - Method of manufacturing electron-emitting device, electron source and image-forming apparatus, and apparatus of manufacturing electron source (2004-08-24),
13. 6752676 - Methods for producing electron-emitting device, electron source, and image-forming apparatus (2004-06-22),
14. 6608437 - Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same (2003-08-19),
15. 6582268 - Electron-emitting device, electron source and manufacture method for image-forming apparatus (2003-06-24),

Title: **Toshikazu Ohnishi: A Pioneer in Electron-Emitting Device Technology**

Introduction

Toshikazu Ohnishi is a notable inventor based in Machida, Japan, with an impressive portfolio comprising 63 patents. His work primarily focuses on advancements in electron-emitting devices, showcasing his innovative approach to improving technology in this field.

Latest Patents

Among his latest inventions is a method for manufacturing an electron-emitting device that incorporates first and second carbon films. This electron-emitting device features a pair of electrodes with an electroconductive film situated between them, which includes an electron-emitting region carrying a graphite film. Notably, the graphite film displays distinctive characteristics in Raman spectroscopic analysis, demonstrating significant peaks that are critical for its functionality.

Another remarkable patent involves an electron-emitting device that includes oppositely disposed electrodes and an electroconductive film with a high resistance region. This region contains a deposit primarily consisting of carbon, making the device suitable for use as an electron source in flat-panel image-forming apparatuses.

Career Highlights

Toshikazu Ohnishi's career includes significant tenures at reputable companies like Canon and NEC Corporation. His contributions to these institutions have been instrumental in advancing technology and innovation, particularly in the development of electron sources and related devices.

Collaborations

Throughout his career, Ohnishi has collaborated with esteemed colleagues such as Kazuo Yoshinaga and Masato Yamanobe. These partnerships have enabled him to leverage collective expertise, further enhancing the quality and impact of his inventions.

Conclusion

Toshikazu Ohnishi's extensive patent portfolio and innovative contributions serve as a testament to his expertise in the field of electron-emitting devices. With a strong background at leading companies and fruitful collaborations, Ohnishi continues to influence and shape the future of technology through his inventions. His work remains critical in developing efficient and advanced electron-emitting technologies for various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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