Kawasaki, Japan

Toshihiko Ono

This inventor holds 2 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1982-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihiko Ono. Retrieved from https://idiyas.com/inventor/toshihiko-ono-i14lf9k6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 55(Granted Patents)


Company Filing History:


Years Active: 1982-1994

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2 patents (USPTO):Explore Patents

Title: Toshihiko Ono: Innovator in Semiconductor Technology

Introduction

Toshihiko Ono is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for forming tungsten films and manufacturing semiconductor devices.

Latest Patents

One of his latest patents is a method of forming tungsten film. This process involves depositing a tungsten film on a substrate using a chemical vapor deposition (CVD) process. The source gas comprises WF.sub.6, a silane group compound such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8, or Si.sub.4 H.sub.10, along with hydrogen fluoride or fluorine. This method allows for deposition at lower temperatures than in prior art, resulting in a tungsten film with low sheet resistance and excellent step coverage. Additionally, the tungsten film can be selectively deposited.

Another notable patent by Ono is related to the method of manufacturing semiconductor devices that utilize a photoresist film. In this process, a layer of aluminum on a semiconductor substrate is covered by a layer of phospho-silicate glass. The surface of the semiconductor chip is then covered with a positive photoresist film, which undergoes heat treatment. An upper surface of the photoresist film is subsequently covered with a polyimide resin, which is also heat treated. If the semiconductor device lacks the layer of phospho-silicate glass and exposes the aluminum layer, a positive photoresist film is interposed on the aluminum, and the polyimide resin is applied to cover the upper surface of the interlayer, followed by heat treatment.

Career Highlights

Toshihiko Ono is associated with Fujitsu Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have contributed to the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Ono has collaborated with notable colleagues in his field, including Toshio Kurahashi and Kazuo Tokitomo. These collaborations have further enhanced the impact of his work in semiconductor technology.

Conclusion

Toshihiko Ono's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient manufacturing processes in the semiconductor industry

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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