Fujitsu Corporation

Toshihiko Ono

Yuji Furumura

Fumitake Mieno

Kazuo Tokitomo

Toshio Kurahashi

A tungsten film is deposited on a substrate by a CVD process using a source gas comprising WF.sub.6, a silane group compound such as SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8 or Si.sub.4 H.sub.10, and hydrogen fluoride or fluorine, at a lower temperature than in the prior art. The resultant tungsten film has low sheet resistance and good step coverage. The tungsten film may be selectively deposited.

Method of forming tungsten film

A layer of aluminum on a semiconductor substrate is covered by a layer of phospho-silicate glass. The surface of the semiconductor chip is covered with a positive photoresist film which is then heat treated. An upper surface of the photoresist film is covered with a polyimide resin which is heat treated, thereafter. If the semiconductor device is devoid of the layer of phospho-silicate glass, and the layer of aluminum is exposed, a positive photoresist film is interposed on the aluminum and the polyimide resin is applied to cover the upper surface of the interlayer, and is heat treated.

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Kawasaki, Japan

Toshihiko Ono