Tokyo, Japan

Toshihide Ohgata

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihide Ohgata. Retrieved from https://idiyas.com/inventor/toshihide-ohgata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: The Innovations of Toshihide Ohgata

Introduction

Toshihide Ohgata is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of dry etching technology. His work has had a notable impact on the semiconductor industry.

Latest Patents

Toshihide Ohgata holds a patent for a "Process for dry etching of aluminum and its alloy." This innovation showcases his expertise in materials processing and semiconductor fabrication. He has been recognized for his unique approach to enhancing the efficiency of etching processes.

Career Highlights

Ohgata is currently employed at Hitachi, Ltd., a leading company in technology and electronics. His role at Hitachi has allowed him to work on cutting-edge projects that push the boundaries of innovation in the industry. His dedication to research and development has made him a valuable asset to his team.

Collaborations

Toshihide Ohgata has collaborated with notable colleagues, including Hideo Komatsu and Tatsumi Mizutani. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Toshihide Ohgata's contributions to the field of dry etching and his work at Hitachi, Ltd. highlight his importance as an inventor. His innovative spirit continues to drive advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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