Narashino, Japan

Toshiaki Ohta

This inventor holds 1 USPTO granted patent. Top assignees: Hoya Corporation, Shinto Chemitron Co., Ltd.. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiaki Ohta. Retrieved from https://idiyas.com/inventor/toshiaki-ohta-gee5p2bd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 43(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Toshiaki Ohta: Innovator in Transparent Substrate Technology

Introduction

Toshiaki Ohta is a notable inventor based in Narashino, Japan. He has made significant contributions to the field of transparent substrate technology. His innovative work has led to the development of processes that enhance the functionality and application of transparent materials.

Latest Patents

Ohta holds a patent for a process for producing a transparent substrate that features transparent conductive pattern elements separated by a light-shielding insulating film. This invention not only advances the production of transparent substrates but also facilitates the creation of surface-colored materials by utilizing the same process. His patent portfolio includes 1 patent that showcases his expertise in this specialized area.

Career Highlights

Throughout his career, Toshiaki Ohta has worked with prominent companies such as Hoya Corporation and Shinto Chemitron Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in material science.

Collaborations

Ohta has collaborated with esteemed colleagues, including Osamu Sugihara and Hiroshi Masuda. These partnerships have fostered an environment of innovation and creativity, leading to the successful development of new technologies.

Conclusion

Toshiaki Ohta's contributions to transparent substrate technology exemplify his dedication to innovation and excellence. His work continues to influence the industry and inspire future advancements in material science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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