Obu, Japan

Toshiaki Nishizawa

This inventor holds 5 USPTO granted patents. Top assignee: Nippondenso Co., Ltd.. Active years: 1986-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiaki Nishizawa. Retrieved from https://idiyas.com/inventor/toshiaki-nishizawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 94(Granted Patents)


Location History:

  • Ohbu, JP (1986)
  • Obu, JP (1995 - 1997)

Company Filing History:


Years Active: 1986-1997

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5 patents (USPTO):Explore Patents

Title: Toshiaki Nishizawa: Innovator in Semiconductor Technology

Introduction

Toshiaki Nishizawa is a prominent inventor based in Obu, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the functionality and accuracy of power semiconductor devices.

Latest Patents

Nishizawa's latest patents include a semiconductor device with a current detecting function. This innovative power semiconductor device features a detection part that possesses a better reach-through withstand voltage capability than the principal current part. The design incorporates elements such as DMOS, IGBT, or BPT cells, where one area acts as the detection part and another as the principal current part. The detection part and the principal current part share a common electrode, utilizing a high-density substrate with a low-density layer of a first conductivity type.

Another notable patent is a method of producing a semiconductor device that ensures accurate current detection. This power DMOS semiconductor device is produced using standard processes and enhances current detecting accuracy. The device comprises main wells, subwells, and a line well, which is independent of the main and subwells. These components are formed by doping the surface of a semiconductor substrate with well-forming impurities, allowing for improved performance.

Career Highlights

Nishizawa is currently employed at Nippondenso Co., Ltd., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the capabilities of power semiconductor devices, making them more efficient and reliable.

Collaborations

Throughout his career, Nishizawa has collaborated with notable colleagues, including Akira Kuroyanagi and Tsuyoshi Yamamoto. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Toshiaki Nishizawa's contributions to semiconductor technology have established him as a key figure in the industry. His innovative patents and ongoing work at Nippondenso Co., Ltd. continue to shape the future of power semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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