Sabae, Japan

Toshiaki Kariya

This inventor holds 1 USPTO granted patent. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiaki Kariya. Retrieved from https://idiyas.com/inventor/toshiaki-kariya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Toshiaki Kariya: Innovator in High Frequency Circuit Components

Introduction

Toshiaki Kariya is a notable inventor based in Sabae, Japan. He has made significant contributions to the field of electronics, particularly in the development of high frequency circuit components. His innovative work has led to the filing of a patent that showcases his expertise and creativity.

Latest Patents

Kariya holds a patent for a high frequency circuit component. This invention reflects his commitment to advancing technology in the electronics sector. The patent demonstrates his ability to address complex challenges in circuit design and functionality.

Career Highlights

Kariya is currently employed at Murata Manufacturing Co., Ltd., a leading company in the electronics industry. His role at Murata allows him to collaborate with other talented engineers and contribute to groundbreaking projects. His work has been instrumental in enhancing the performance of electronic devices.

Collaborations

Kariya has worked alongside Mitsuhide Kato, a fellow engineer at Murata. Their collaboration has fostered innovation and has led to the successful development of new technologies in their field.

Conclusion

Toshiaki Kariya is a distinguished inventor whose work in high frequency circuit components has made a lasting impact on the electronics industry. His contributions continue to inspire advancements in technology and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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