Aichi, Japan

Toshiaki Fukatsu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kabushiki Kaisha Toyota Jidoshokki. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiaki Fukatsu. Retrieved from https://idiyas.com/inventor/toshiaki-fukatsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Biography of Toshiaki Fukatsu

Introduction: Toshiaki Fukatsu is a notable inventor based in Aichi-ken, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor unit that enhances temperature detection capabilities.

Latest Patents: Toshiaki Fukatsu holds a patent for a semiconductor unit. This unit includes a semiconductor chip, a ceramic substrate with a circuit pattern for mounting the semiconductor chip, and a temperature sensor for detecting temperature. Additionally, the semiconductor unit features a pressing member that retains the temperature sensor by pressing against the ceramic substrate.

Career Highlights: Toshiaki Fukatsu is associated with Toyota Jidoshokki Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the company's technological capabilities.

Collaborations: Throughout his career, Toshiaki has collaborated with esteemed colleagues, including Hiroyuki Onishi and Toshiaki Nagase. These collaborations have fostered innovation and contributed to the success of their projects.

Conclusion: Toshiaki Fukatsu's contributions to semiconductor technology exemplify his dedication to innovation. His patent and collaborative efforts reflect his commitment to advancing technology in the automotive industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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