Company Filing History:
Years Active: 2017-2019
Title: The Innovations of Toru Muramatsu
Introduction
Toru Muramatsu is a notable inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.
Latest Patents
One of his latest patents involves a semiconductor device and a method of manufacturing such a device. This invention includes a base layer of a first conductivity type with a MOS gate structure on its front surface. Additionally, it features a collector layer of a second conductivity type on the rear surface of the base layer. The device incorporates a first dopant and a second dopant, which is different from the first, implanted into the collector layer. A collector electrode is also formed on the rear surface of the collector layer. Notably, the impurity concentration peak of the second dopant is positioned deeper than that of the first dopant, with its magnitude exceeding 1/100 of the first dopant's peak.
Career Highlights
Toru Muramatsu is currently employed at Fuji Electric Co., Ltd., where he continues to innovate in semiconductor technology. His expertise and dedication have positioned him as a key figure in his field.
Collaborations
He has collaborated with notable coworkers, including Hong-fei Lu and Haruo Nakazawa, contributing to various projects and advancements in semiconductor devices.
Conclusion
Toru Muramatsu's work in semiconductor technology exemplifies innovation and dedication. His patents reflect a commitment to improving device performance and efficiency. His contributions continue to influence the industry positively.