Dresden, Germany

Torben Kelwing

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: The Innovations of Torben Kelwing

Introduction

Torben Kelwing is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-k metal gate electrode structures. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Kelwing holds a patent titled "CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal." This patent addresses the challenges associated with forming high-k metal gate electrode structures. By applying a heat treatment or anneal process after incorporating work function metal species, he has demonstrated a method to significantly reduce the CET for a given physical thickness of the gate dielectric layer.

Career Highlights

Torben Kelwing is currently employed at Globalfoundries Inc., a leading company in semiconductor manufacturing. His work at Globalfoundries has positioned him as a key player in the advancement of semiconductor technologies. With a focus on innovation, he continues to contribute to the development of cutting-edge solutions in the industry.

Collaborations

Kelwing has collaborated with notable colleagues such as Martin Trentzsch and Boris Bayha. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing the quality of their work.

Conclusion

Torben Kelwing's contributions to semiconductor technology through his innovative patent and collaborative efforts highlight his importance in the field. His work continues to influence advancements in electronic device performance and efficiency.

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