Wuxi, China

Tong Feng

This inventor holds 1 USPTO granted patent. Top assignee: Wuxi Smart Memories Technologies Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tong Feng. Retrieved from https://idiyas.com/inventor/tong-feng-3b8qsu1d

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Tong Feng and Ferroelectric Memory Innovation.

Introduction

Tong Feng is an inventor associated with Wuxi, China, and Wuxi Smart Memories Technologies Co., Ltd. His patent work concerns methods for operating ferroelectric memory cells.

Latest Patents

Feng is associated with 1 patent, titled “Operation Method of Ferroelectric Memory.” The disclosed method uses a first ferroelectric memory cell to store a data bit and a second cell to store a sign bit. After receiving a read or write-operation request, the method reads the sign bit and, under the specified condition, inverts the data bit before reading it from the first cell.

Career Highlights

Feng’s listed patent reflects work on data handling in ferroelectric memory, including the use of a sign bit to guide the reading process. He is associated with Wuxi Smart Memories Technologies Co., Ltd.

Collaborations

Feng’s listed coworkers include Feng Pan and Ke Ma.

Conclusion

Tong Feng’s patent focuses on a sign-bit-based method for operating ferroelectric memory cells, highlighting his contribution to memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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