Yardley, PA, United States of America

Tomoyuki Ogata

USPTO Granted Patents = 1 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tomoyuki Ogata

Introduction

Tomoyuki Ogata is a notable inventor based in Yardley, PA (US). He has made significant contributions to the field of materials science, particularly in the area of semiconductor manufacturing. His innovative work has led to the development of a unique patent that enhances the efficiency of dielectric layer deposition.

Latest Patents

Tomoyuki Ogata holds a patent for an "Inherent area selective deposition of silicon-containing dielectric on metal substrate." This patent describes an inherently selective process for the deposition of silicon-containing dielectric layers on metal layers. The process utilizes atomic layer deposition or chemical vapor deposition with a chemical precursor comprising silicon and sulfur, along with an oxidant. An optional buffer layer may be present between the metal layer and the selectively deposited film. This innovation is crucial for improving the performance and reliability of electronic devices.

Career Highlights

Ogata is currently employed at Gelest, Inc., a company known for its advanced materials and chemical solutions. His work at Gelest has allowed him to explore and develop cutting-edge technologies that are essential for the semiconductor industry. His expertise in material deposition techniques has positioned him as a valuable asset in his field.

Collaborations

Tomoyuki Ogata collaborates with Chad Michael Brick, a fellow innovator in the industry. Together, they work on projects that push the boundaries of material science and semiconductor technology.

Conclusion

Tomoyuki Ogata's contributions to the field of semiconductor manufacturing through his innovative patent and work at Gelest, Inc. highlight his importance as an inventor. His advancements in selective deposition processes are paving the way for future developments in electronic materials.

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