This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignees: Kao Corporation, Renesas Electronics Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Tomoya Nishimura: Innovator in Semiconductor Technology
Introduction
Tomoya Nishimura is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device and its manufacturing method.
Latest Patents
Nishimura holds 1 patent for a semiconductor device and method of manufacturing the same. This invention involves the formation of a first trench extending in a Y direction within a semiconductor substrate located in both a cell region and an outer peripheral region. Additionally, a second trench surrounds the cell region in a plan view. The design includes a p-type body region and multiple p-type floating regions in the outer peripheral region. A field plate electrode is strategically placed at the lower portion of each trench, while a gate electrode is positioned at the upper portion of the first trench in the cell region. Furthermore, a floating gate electrode is formed at the upper portion of the first trench in the outer peripheral region and the second trench.
Career Highlights
Nishimura is currently employed at Renesas Electronics Corporation, where he continues to advance semiconductor technology. His work has been instrumental in enhancing the efficiency and performance of semiconductor devices.
Collaborations
Throughout his career, Nishimura has collaborated with notable colleagues, including Atsushi Sakai and Katsumi Eikyu. These partnerships have fostered innovation and contributed to the success of their projects.
Conclusion
Tomoya Nishimura's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Renesas Electronics Corporation highlight his commitment to advancing the field.