Company Filing History:
Years Active: 2003
Title: Tomoya Katou: Innovator in Thin Film Transistor Technology
Introduction
Tomoya Katou is a notable inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin film transistors. His innovative work has led to advancements that enhance the performance and productivity of electronic devices.
Latest Patents
Tomoya Katou holds 1 patent for his invention titled "Thin film transistor substrate and process for producing the same." This patent describes a polycrystalline silicon thin film transistor substrate featuring a self-aligned LDD. The substrate is equipped with a gate made of a molybdenum-tungsten alloy, which has a tungsten concentration between 5% and 25% by weight, ideally around 17 to 22%. The production process involves a wet-etching step using an etching solution with a phosphoric acid concentration of 60% to 70% by weight. This innovative design ensures uniform characteristic properties and enhances productivity.
Career Highlights
Tomoya Katou is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to focus on cutting-edge research and development in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of thin film transistors.
Collaborations
Tomoya has collaborated with notable colleagues, including Takeshi Satou and Takuya Takahashi. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Tomoya Katou's work in thin film transistor technology exemplifies the spirit of innovation in the semiconductor industry. His contributions continue to influence the development of more efficient electronic devices.