Kawagoe, Japan

Tomotsugu Shimmyo


Average Co-Inventor Count = 28.0

ph-index = 5

Forward Citations = 82(Granted Patents)


Company Filing History:


Years Active: 1993-2005

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11 patents (USPTO):Explore Patents

Title: Tomotsugu Shimmyo: Innovator in Semiconductor Technology

Introduction

Tomotsugu Shimmyo is a prominent inventor based in Kawagoe, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on the fabrication processes of semiconductor integrated circuit devices, which are crucial for modern electronic applications.

Latest Patents

Among his latest patents, Shimmyo has developed a semiconductor integrated circuit device and a process for fabricating the same. This invention involves a detailed process for forming Metal-Insulator-Semiconductor Field-Effect Transistors (MISFETs) over the active regions of a substrate. The process includes several steps, such as forming masks, etching the substrate, and introducing impurities to create channel stopper regions. Another notable patent involves a semiconductor integrated circuit device that features a first wiring strip exposed through a connecting hole, along with a transition-metal film and an aluminum wiring strip.

Career Highlights

Throughout his career, Tomotsugu Shimmyo has worked with leading companies in the semiconductor industry, including Hitachi, Ltd. and Hitachi VLSI Engineering Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor fabrication processes and contribute to advancements in the field.

Collaborations

Shimmyo has collaborated with notable colleagues, including Jun Sugiura and Osamu Tsuchiya. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Tomotsugu Shimmyo's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices.

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