Kanagawa, Japan

Tomonori Nakayama

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 22(Granted Patents)


Location History:

  • Kanagawa, JP (2016 - 2024)
  • Atsugi, JP (2024)

Company Filing History:


Years Active: 2016-2025

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10 patents (USPTO):Explore Patents

Title: The Innovations of Tomonori Nakayama

Introduction

Tomonori Nakayama is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on novel materials and devices that enhance the performance of electronic components.

Latest Patents

Among his latest patents, Nakayama has developed a novel metal oxide that includes a first region, a second region, and a third region situated between them. The interface of the first region is covered with the third region, which has lower crystallinity than the first region. The size of the first region, as observed through a transmission electron microscope, ranges from 1 nm to 3 nm. Additionally, he has created a transistor designed to minimize characteristic degradation due to stray light. This transistor features multiple layers of insulators and conductors, with a metal oxide that has a bandgap of at least 3.3 eV.

Career Highlights

Tomonori Nakayama is currently employed at Semiconductor Energy Laboratory Co., Ltd., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the capabilities of transistors and display devices.

Collaborations

He has collaborated with notable figures in the field, including Shunpei Yamazaki and Kenichi Okazaki, further enhancing the impact of his research and inventions.

Conclusion

Tomonori Nakayama's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced electronic devices.

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