The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Oct. 12, 2021
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Tomonori Nakayama, Atsugi, JP;
Masahiro Takahashi, Atsugi, JP;
Hitoshi Kunitake, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A ferroelectric device () that includes a metal nitride film () with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (), a metal nitride film over the first conductor, a second conductor () over the metal nitride film, a first insulator () over the second conductor, and a second insulator () over the first insulator. The first insulator includes regions in contact with the side surface of the metal nitride film and the side surface and the top surface of the second conductor; the metal nitride film has ferroelectricity; the metal nitride film contains a first element, a second element, and nitrogen; the first element is one or more elements selected from Group 13 elements; the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element; the first conductor and the second conductor each contain nitrogen; the first insulator contains aluminum and oxygen; and the second insulator contains silicon and nitrogen.