Yokohama, Japan

Tomomi Yoda

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2014.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Celebrating the Innovations of Tomomi Yoda

Introduction: Tomomi Yoda, an accomplished inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With her innovative approach, she holds a patent that showcases her expertise in nonvolatile semiconductor memory devices.

Latest Patents: Yoda’s patent, titled "Nonvolatile semiconductor memory device and method of manufacturing the same," reveals her technical acumen. The invention encompasses a semiconductor substrate, a gate insulating film, and a floating gate electrode composed of polysilicon containing a p-type impurity. This innovative design features a unique configuration with a lower film and an upper film, where one of the concentrations of the p-type impurity in the upper film is higher than that in the lower film. This advancement in semiconductor technology has the potential to improve data storage solutions significantly.

Career Highlights: Working at Kabushiki Kaisha Toshiba, Yoda has been instrumental in driving forward technological advancements. Her role at this prominent company has allowed her to utilize her skills in the ever-evolving field of semiconductor development.

Collaborations: Tomomi Yoda collaborates with esteemed colleagues such as Masaki Kondo and Nobutoshi Aoki. Their combined expertise enhances the innovative projects they undertake, contributing to the growth & development of cutting-edge technologies in the semiconductor space.

Conclusion: Tomomi Yoda's work exemplifies the spirit of innovation. Her patent for a nonvolatile semiconductor memory device underscores her role as a vital contributor to the realm of technology. As she continues her career, her advancements will undoubtedly inspire future innovations in semiconductor design and application.

Profile summary based on public USPTO records.
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