Yokohama, Japan

Tomohiro Suzuka

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Semiconductor Limited. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohiro Suzuka. Retrieved from https://idiyas.com/inventor/tomohiro-suzuka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tomohiro Suzuka

Introduction

Tomohiro Suzuka is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance of electronic devices.

Latest Patents

Tomohiro Suzuka holds 1 patent for his invention titled "Contactor including a covalent bond layer." This patent describes a contactor that includes a base material made of a first material and a conductor film made of a second material. The conductor film is specifically formed only on the contact surface with an electrode of a semiconductor apparatus at the tip of the contactor film.

Career Highlights

Tomohiro Suzuka is currently employed at Fujitsu Semiconductor Limited, where he continues to work on advancing semiconductor technologies. His expertise in the field has made him a valuable asset to the company and the industry as a whole.

Collaborations

Throughout his career, Tomohiro has collaborated with talented individuals such as Shigeyuki Maruyama and Yoshihiro Sekizawa. These collaborations have fostered innovation and contributed to the success of their projects.

Conclusion

Tomohiro Suzuka's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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