Miyagi, Japan

Tomohiro Okamura

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Lapis Semiconductor Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohiro Okamura. Retrieved from https://idiyas.com/inventor/tomohiro-okamura-un1p9pgt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Tomohiro Okamura: Innovator in Semiconductor Technology

Introduction: Tomohiro Okamura is a notable inventor based in Miyagi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for fabricating semiconductor devices.

Latest Patents: Okamura holds a patent for a "Method of fabricating semiconductor device." This method involves several steps, including forming an active region on a semiconductor substrate, creating a light receiving element region, and implanting impurities to enhance the device's functionality. The process is designed to ensure precise positioning and effective performance of the semiconductor device.

Career Highlights: Okamura is associated with Lapis Semiconductor Co., Ltd., where he applies his expertise in semiconductor fabrication. His work has been instrumental in advancing the company's technological capabilities. With a focus on innovation, he continues to push the boundaries of what is possible in semiconductor design.

Collaborations: Okamura collaborates with fellow inventor Masao Okihara, sharing insights and expertise to further enhance their projects. Their partnership exemplifies the spirit of teamwork in the field of technology.

Conclusion: Tomohiro Okamura's contributions to semiconductor technology highlight his role as a leading inventor in the industry. His innovative methods and collaborative efforts continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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