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For the Inventor, By the Inventor

Hachioji, Japan

Tomohiro Ohno

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohiro Ohno. Retrieved from https://idiyas.com/inventor/tomohiro-ohno-29a81uc1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:

goldMedal1 out of 42,760 
 
Hitachi, Ltd.
 patents

Years Active: 2003

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1 patent (USPTO):Explore Patents
1. 6635908 - Burying type avalanche photodiode and fabrication method thereof (2003-10-21),

Title: Tomohiro Ohno: Inventor in Photodetector Technology

Introduction

Tomohiro Ohno is an inventor associated with Hachioji, Japan. His patent work includes a technology for avalanche photodiodes, devices used to detect light.

Latest Patents

Ohno is credited with 1 patent: “Burying Type Avalanche Photodiode and Fabrication Method Thereof.” The invention concerns an avalanche photodiode structure and a method for fabricating it.

Career Highlights

Ohno’s listed patent is associated with Hitachi, Ltd., a company active in technology and electronics. The patent reflects his contribution to the development and fabrication of photodetector technology.

Collaborations

Yasunobu Matsuoka and Shinji Tsuji are identified as Ohno’s coworkers.

Conclusion

Tomohiro Ohno’s recorded invention focuses on an avalanche photodiode and its fabrication, highlighting his connection to photodetector innovation at Hitachi, Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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