Company Filing History:
Years Active: 2014
Title: Tomohiko Niizeki: Innovator in Spintronics Technology
Introduction: Tomohiko Niizeki is a prominent inventor based in Ibaraki-ken, Japan. He has made significant contributions to the field of spintronics, particularly through his innovative patent related to ferromagnetic tunnel junction structures. His work has implications for the development of advanced magnetoresistive devices.
Latest Patents: Niizeki holds a patent for a "Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same." This invention features a ferromagnetic tunnel junction structure that includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer. The tunnel barrier layer is composed of a crystalline non-magnetic material that shares constituent elements with a crystalline oxide exhibiting a spinel structure. The design aims to enhance the performance of spintronic devices.
Career Highlights: Niizeki is affiliated with the National Institute for Materials Science, where he conducts research and development in materials science and engineering. His work focuses on the intersection of magnetism and electronics, contributing to the advancement of technology in this area.
Collaborations: Some of his notable coworkers include Hiroaki Sukegawa and Seiji Mitani, who have collaborated with him on various research projects.
Conclusion: Tomohiko Niizeki's contributions to the field of spintronics through his innovative patent highlight his role as a key inventor in advancing technology. His work continues to influence the development of new materials and devices in the realm of magnetoresistive technology.