Yokohama Kanagawa, Japan

Tomoe Nishimura

This inventor holds 1 USPTO granted patent. Top assignee: Kioxia Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomoe Nishimura. Retrieved from https://idiyas.com/inventor/tomoe-nishimura-qgnrzui8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Tomoe Nishimura: Innovator in Magnetic Memory Technology

Introduction

Tomoe Nishimura is a prominent inventor based in Yokohama, Kanagawa, Japan. She has made significant contributions to the field of magnetic memory technology. With a focus on innovative solutions, her work has the potential to impact various applications in data storage.

Latest Patents

Nishimura holds a patent for a magnetic memory device. This invention includes a magnet designed to store data and facilitate the movement of that data from one area to another through domain wall movement. The device features an interconnect that applies a write field during write operations and a control circuit that manages the flow of shift and write currents. Notably, the write current consists of two pulses, with the second pulse having a shorter width than the first.

Career Highlights

Tomoe Nishimura is currently employed at Kioxia Corporation, where she continues to advance her research and development efforts. Her work at Kioxia has positioned her as a key player in the evolution of memory technologies.

Collaborations

Nishimura collaborates with talented colleagues, including Michael Arnaud Quinsat and Naoharu Shimomura. These partnerships enhance her research and contribute to the innovative environment at Kioxia Corporation.

Conclusion

Tomoe Nishimura's contributions to magnetic memory technology exemplify her dedication to innovation. Her patent and ongoing work at Kioxia Corporation highlight her role as a leading inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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