Tokio Ohkoshi

Title: Innovations of Tokio Ohkoshi

Introduction

Tokio Ohkoshi is a notable inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Ohkoshi's latest patents include a sintered aluminum nitride semiconductor device. This device comprises sintered aluminum nitride with a high thermal conductivity, containing at least 65% by weight of aluminum nitride, along with beryllium or lithium compounds. Another significant patent is for a semiconductor device that features an electrically insulating substrate made of sintered silicon carbide. This substrate exhibits a thermal conductivity of at least 0.4 cal/cm·sec·°C at 25°C, an electrical resistivity of at least 10⁷ ohm·cm at 25°C, and a coefficient of thermal expansion ranging from 3.3 to 4 x 10⁻⁶ /°C from 25°C to 300°C.

Career Highlights

Tokio Ohkoshi is currently employed at Hitachi, Ltd., where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Ohkoshi has collaborated with notable colleagues such as Yukio Takeda and Kousuke Nakamura, contributing to the development of cutting-edge semiconductor technologies.

Conclusion

Tokio Ohkoshi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices and materials.