Hitachi, Ltd.

Tokio Ohkoshi

Kousuke Nakamura

Yasuo Matsushita

Yukio Takeda

Satoru Ogihara

Kunihiro Maeda

Mitsuru Ura

Tadamichi Asai

A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.

Sintered aluminum nitride semi-conductor device

Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cm.multidot.sec.multidot..degree.C. at 25.degree. C., electrical resistivity of at least 10.sup.7 ohm.multidot.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C.

Semiconductor device having electrically insulating substrate of SiC

Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.

Sintered aluminum nitride and semi-conductor device using the same

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Hitachi, Japan

Tokio Ohkoshi