Todd Thiebeault

Title: The Innovative Journey of Todd Thiebeault: A Pioneer in Semiconductor Technology

Introduction: Todd Thiebeault, a talented inventor based in Gorham, Maine, has made significant contributions to the field of semiconductor technology. With one patent to his name, he has developed a method that enhances the performance of bipolar transistors, which are crucial components in many electronic devices.

Latest Patents: Todd's patent, titled "Utilization of doped glass on the sidewall of the emitter window in a bipolar transistor structure," presents an innovative architecture and manufacturing method for bipolar transistor devices. The invention utilizes doped glass on the sidewall of the emitter window to reduce emitter-base overlap capacitance, thereby improving the polysilicon plugging effect. This technique not only aids in reducing dopant loss but also eliminates concerns related to dopant absorption that may occur in un-doped spacers. Furthermore, the proposed method simplifies achieving narrow emitter window openings while enhancing doping uniformity compared to traditional implanted poly techniques.

Career Highlights: Todd has been associated with National Semiconductor Corporation, a leading name in the semiconductor industry. His work focuses on enhancing bipolar transistor designs, contributing to advancements that can significantly impact the performance and efficiency of electronic devices.

Collaborations: Throughout his career, Todd has collaborated with notable colleagues, including Jeff A. Babcock and Steve Adler. Together, they have pushed the boundaries of semiconductor research, contributing to the company's innovative projects.

Conclusion: Todd Thiebeault's inventive spirit and significant contributions to semiconductor technology are a testament to the importance of innovation in the electronics industry. His dedication to improving bipolar transistor design will undoubtedly have lasting effects on how electronic devices are developed and manufactured in the future.