Company Filing History:
Years Active: 2014
Title: Innovations of Ting-En Shie in Semiconductor Technology
Introduction
Ting-En Shie is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that showcases his expertise and creativity.
Latest Patents
Ting-En Shie holds a patent for a semiconductor device. This device includes a main body made of a GaN-based semiconductor material, along with at least one electrode structure. The electrode structure features an ohmic contact layer formed on the main body, a buffer layer on the ohmic contact layer, and a circuit layer made of a copper-based material. The ohmic contact layer is composed of materials such as titanium, aluminum, nickel, and their alloys. The buffer layer is made from materials different from the ohmic contact layer, including titanium, tungsten, titanium nitride, and tungsten nitride.
Career Highlights
Ting-En Shie is affiliated with National Yang Ming Chiao Tung University, where he continues to advance his research in semiconductor technology. His work has garnered attention for its innovative approach and practical applications in the industry.
Collaborations
Ting-En Shie has collaborated with notable colleagues, including Yi Chang and Chia-Hua Chang. Their combined efforts contribute to the advancement of semiconductor research and development.
Conclusion
Ting-En Shie's contributions to semiconductor technology exemplify his innovative spirit and dedication to research. His patent reflects a significant advancement in the field, showcasing the potential for future developments in semiconductor devices.