The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Feb. 08, 2012
Yi Chang, Hsinchu, TW;
Chia-hua Chang, Taichung, TW;
Yueh-chin Lin, New Taipei, TW;
Yu-kong Chen, New Taipei, TW;
Ting-en Shie, Hsinchu, TW;
Yi Chang, Hsinchu, TW;
Chia-Hua Chang, Taichung, TW;
Yueh-Chin Lin, New Taipei, TW;
Yu-Kong Chen, New Taipei, TW;
Ting-En Shie, Hsinchu, TW;
Abstract
A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.