Location History:
- Bethlehem, PA (US) (2009)
- Rexford, NY (US) (2012)
Company Filing History:
Years Active: 2009-2012
Title: The Innovations of Timothy J Bettles
Introduction
Timothy J Bettles is a notable inventor based in Rexford, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on nitride semiconductor heterostructures, which are crucial for advancing electronic and optoelectronic devices.
Latest Patents
Bettles' latest patents include innovations in nitride semiconductor heterostructures and related methods. These semiconductor structures and devices are based on an aluminum nitride single-crystal substrate, with at least one layer epitaxially grown thereover. The epitaxial layer may comprise materials such as AlN, GaN, InN, or any binary or tertiary alloy combination thereof. Notably, the average dislocation density within the semiconductor heterostructure is less than about 10 cm, which enhances the performance and reliability of the devices.
Career Highlights
Timothy J Bettles has established himself as a key figure in the semiconductor industry. His work at Crystal Is, Inc. has allowed him to push the boundaries of semiconductor technology. His innovative approaches have contributed to the development of high-quality semiconductor materials that are essential for modern electronic applications.
Collaborations
Bettles has collaborated with several talented individuals in his field, including Leo J Schowalter and Joseph A Smart. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in semiconductor technology.
Conclusion
Timothy J Bettles is a distinguished inventor whose work in nitride semiconductor heterostructures has made a significant impact on the industry. His contributions continue to pave the way for future innovations in semiconductor technology.