The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Nov. 12, 2009
Leo J. Schowalter, Latham, NY (US);
Joseph A. Smart, Mooresville, NC (US);
Shiwen Liu, Acton, MA (US);
Kenneth E. Morgan, Castleton, NY (US);
Robert T. Bondokov, Watervliet, NY (US);
Timothy J. Bettles, Rexford, NY (US);
Glen A. Slack, Scotia, NY (US);
Leo J. Schowalter, Latham, NY (US);
Joseph A. Smart, Mooresville, NC (US);
Shiwen Liu, Acton, MA (US);
Kenneth E. Morgan, Castleton, NY (US);
Robert T. Bondokov, Watervliet, NY (US);
Timothy J. Bettles, Rexford, NY (US);
Glen A. Slack, Scotia, NY (US);
Crystal IS, Inc., Green Island, NY (US);
Abstract
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10cm.