Colchester, VT, United States of America

Timothy E Forhan


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):

Title: The Innovations of Timothy E. Forhan

Introduction

Timothy E. Forhan is a notable inventor based in Colchester, Vermont, known for his contributions to the field of semiconductor technology. He has developed innovative solutions that enhance the reliability of MOS transistors, addressing critical issues in device performance.

Latest Patents

Forhan holds a patent titled "Hot electron compensation for improved MOS transistor reliability." This invention involves a circuit that actively monitors and measures the degradation of MOS devices caused by the hot electron effect. The circuit makes compensatory adjustments to device voltage levels or clock speed to maintain optimal functionality and performance. It can monitor NFET and PFET devices separately, allowing for tailored adjustments based on their different degradation rates. The monitor circuit compares the performance of a stressed device to an unstressed reference device, outputting a signal that indicates the level of degradation. This signal is crucial for adjusting the supply voltage or compensating for the degradation, and the monitor circuit can be implemented either on-chip or off-chip.

Career Highlights

Timothy E. Forhan is associated with the International Business Machines Corporation (IBM), where he has made significant contributions to research and development in semiconductor technology. His work has been instrumental in advancing the reliability of electronic devices, which is vital for the performance of modern technology.

Collaborations

Throughout his career, Forhan has collaborated with esteemed colleagues, including Terence B. Hook and Steven W. Mittl. These collaborations have fostered innovation and have led to advancements in the field of semiconductor reliability.

Conclusion

Timothy E. Forhan's work exemplifies the impact of innovative thinking in technology. His patent on hot electron compensation showcases his commitment to improving device reliability, making significant strides in the semiconductor industry.

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