Tien-Sung Chen

Title: Tien-Sung Chen: Innovator in Semiconductor Technology

Introduction

Tien-Sung Chen is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to interconnect processes and metal etching methods.

Latest Patents

Chen's latest patents include a process for fabricating interconnects, which involves a series of steps to create a metal silicide layer while ensuring the integrity of the metallic layer. This process utilizes a solution mixture containing hydrogen peroxide, sulfuric acid, water, and hydrofluoric acid to effectively remove the metal silicide layer without damaging the underlying structures. His second patent focuses on a method of metal etching post-cleaning, which employs oxygen-plasma and ozone-plasma ashing techniques to prepare the patterned metal layer for further processing. This method enhances the efficiency and effectiveness of the cleaning process, ensuring high-quality results.

Career Highlights

Tien-Sung Chen is currently employed at Nan Ya Technology Corporation, where he continues to develop innovative solutions in semiconductor manufacturing. His work has been instrumental in advancing the technology used in this critical industry.

Collaborations

Chen has collaborated with notable colleagues, including Yi-Nan Chen and Hui Min Mao, contributing to a dynamic and innovative work environment.

Conclusion

Tien-Sung Chen's contributions to semiconductor technology through his patents and work at Nan Ya Technology Corporation highlight his role as a key innovator in the field. His advancements in interconnect processes and metal etching methods are paving the way for future developments in semiconductor manufacturing.