This inventor holds 1 USPTO granted patent. Top assignee: Innoscience (Suzhou) Semiconductor Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Tianheng Xian and His Nitride-Based Switching Device
Introduction
Tianheng Xian is an inventor associated with Innoscience (Suzhou) Semiconductor Co., Ltd. His listed location is Suzhou, JP. His patent record includes 1 patent concerning a nitride-based bidirectional switching device.
Latest Patents
Xian is named on the patent “Nitride-Based Bidirectional Switching Device and Method for Manufacturing the Same.” The invention describes a dual-gate transistor designed to work with a battery protection controller. Its first source electrode connects to the controller’s ground terminal, while its second source electrode connects to the voltage monitoring terminal through a resistor. The transistor’s first and second gate structures connect to the discharge and charge over-current protection terminals, respectively. This arrangement supports bidirectional switching in a battery protection system.
Career Highlights
Xian’s listed patent reflects work on semiconductor device design and battery protection circuitry. The disclosed device integrates multiple controller connections into a dual-gate transistor structure.
Collaborations
Xian’s listed coworkers include Qiyue Zhao and Wuhao Gao. The patent is associated with Innoscience (Suzhou) Semiconductor Co., Ltd.
Conclusion
Tianheng Xian’s patent focuses on a nitride-based dual-gate switching device for battery protection applications, connecting semiconductor design with charge and discharge over-current control.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile