Singapore, Singapore

Thye Shen Andrew Wee

This inventor holds 1 USPTO granted patent. Top assignee: National University of Singapore. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thye Shen Andrew Wee. Retrieved from https://idiyas.com/inventor/thye-shen-andrew-wee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Thye Shen Andrew Wee: Innovator in Graphene Technology

Introduction

Thye Shen Andrew Wee is a prominent inventor based in Singapore, known for his groundbreaking work in the field of graphene technology. His innovative approach has led to significant advancements in the manipulation of graphene, a material with remarkable electrical properties.

Latest Patents

One of his notable patents is focused on the "Hole doping of graphene." This invention includes a layer of graphene that possesses a first work function, along with a metal oxide film placed on top of the graphene layer. The metal oxide film has a second work function that is greater than the first work function. This configuration allows for the transfer of electrons from the graphene layer to the metal oxide film, resulting in the formation of a hole accumulation layer within the graphene.

Career Highlights

Thye Shen Andrew Wee is affiliated with the National University of Singapore, where he contributes to research and development in advanced materials. His work has garnered attention for its potential applications in various technological fields, including electronics and energy storage.

Collaborations

He has collaborated with esteemed colleagues such as Wei Chen and Zhenyu Chen, further enhancing the impact of his research through teamwork and shared expertise.

Conclusion

Thye Shen Andrew Wee's contributions to graphene technology exemplify the innovative spirit of modern inventors. His patent on hole doping of graphene showcases the potential of this material in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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