Thomas W Sigmon

Title: Thomas W. Sigmon: Innovator in Semiconductor Technology

Introduction

Thomas W. Sigmon is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for shallow junction formation.

Latest Patents

Sigmon holds a patent for a method of shallow junction formation in semiconductor devices using gas. This patent describes a process where shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere that includes the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. Additionally, a silicide layer can be placed over the surface of the semiconductor material prior to irradiation, allowing the dopant to be driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms before the irradiation process.

Career Highlights

Sigmon is affiliated with Leland Stanford Junior University, where he continues to advance research in semiconductor technologies. His work has been instrumental in developing methods that enhance the efficiency and effectiveness of semiconductor devices.

Collaborations

Some of his notable coworkers include Emi Ishida and William Thomas Lynch, who have collaborated with him on various projects related to semiconductor innovations.

Conclusion

Thomas W. Sigmon's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient semiconductor devices.