This inventor holds 1 USPTO granted patent. Top assignee: Sandia Corporation. Active years: 1997.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1997
Title: Thomas R Omstead: Innovator in Integrated Circuit Fabrication
Introduction
Thomas R Omstead is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of integrated circuits. His innovative methods have paved the way for advancements in electronic devices.
Latest Patents
Omstead holds a patent for a "Method for deposition of a conductor in integrated circuits." This patent describes a process for selectively depositing a conductor onto a substrate using a chemical vapor deposition technique. For instance, tungsten can be selectively deposited onto a silicon substrate. The process includes interrupting the deposition when selectivity is lost, allowing for the removal of unwanted tungsten from a mask layer using a halogen etchant. This method enables the achievement of a predetermined thickness of tungsten through multiple deposition and etch back cycles.
Career Highlights
Throughout his career, Omstead has been associated with Sandia Corporation, where he has worked on various projects related to semiconductor fabrication. His expertise in chemical vapor deposition processes has been instrumental in enhancing the efficiency and effectiveness of integrated circuit manufacturing.
Collaborations
Omstead has collaborated with notable colleagues, including J Randall Creighton and Frank Dominguez. These partnerships have contributed to the development of innovative solutions in the semiconductor industry.
Conclusion
Thomas R Omstead's contributions to the field of integrated circuit fabrication highlight his role as a key innovator. His patented methods continue to influence advancements in semiconductor technology, showcasing the importance of innovation in this critical area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
