Munich, Germany

Thomas Kruck

This inventor holds 1 USPTO granted patent. Top assignee: Kali-Chemie Aktiengesellschaft. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thomas Kruck. Retrieved from https://idiyas.com/inventor/thomas-kruck-fwfn13z0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Thomas Kruck: Innovator in Copper Deposition Technology

Introduction

Thomas Kruck is a notable inventor based in Munich, Germany. He has made significant contributions to the field of materials science, particularly in the deposition of copper-containing layers. His innovative approach has implications for various applications in electronics and manufacturing.

Latest Patents

Kruck holds a patent for a process titled "Process for depositing a copper containing layer." This patent involves the deposition of a copper-containing layer on a substrate through the decomposition of a specific compound using a Chemical Vapor Deposition (CVD) process. This technology is crucial for enhancing the performance and reliability of electronic components.

Career Highlights

Throughout his career, Thomas Kruck has been associated with Kali-Chemie Aktiengesellschaft, a company known for its advancements in chemical processes and materials. His work has positioned him as a key figure in the development of innovative deposition techniques.

Collaborations

Kruck has collaborated with Christian Terfloth, contributing to the advancement of their shared projects and enhancing the research output of their team.

Conclusion

Thomas Kruck's contributions to the field of copper deposition technology exemplify the impact of innovative thinking in materials science. His patent and ongoing work continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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