This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2016.
Company Filing History:
1 out of 834,350 Years Active: 2016
Title: Thomas J McKinnon - Innovator in Ferroelectric Memory Technology
Introduction
Thomas J McKinnon is a notable inventor based in Vancouver, Canada. He has made significant contributions to the field of memory technology, particularly through his innovative work on ferroelectric memory devices. His research focuses on enhancing the functionality and efficiency of solid-state non-volatile memory cells.
Latest Patents
Thomas J McKinnon holds 1 patent for his invention titled "Ferroelectric memory device and fabrication process thereof, and methods for operation thereof." This patent presents a new form of a solid-state non-volatile memory cell that comprises a series of different layers of ferroelectric materials, semiconductors, ferroelectric semiconductors, metals, ceramics, and oxides. The memory device is designed to store information based on the direction and magnitude of polarization of the ferroelectric layers. Furthermore, McKinnon's invention allows for the storage of multiple bits of information in a single memory cell by enabling partial polarization of a single ferroelectric layer and stacking multiple ferroelectric functional units. The design also incorporates Schottky barriers to improve functionality and increase resistance, along with a method for depositing textured lithium niobate thin films.
Career Highlights
Throughout his career, Thomas J McKinnon has focused on advancing memory technology. His innovative approaches have led to significant improvements in the efficiency and performance of memory devices. His work is recognized for its potential impact on various applications in electronics and computing.
Collaborations
Thomas J McKinnon has collaborated with Erol Girt, contributing to the development of advanced memory technologies. Their partnership has fostered innovation and has been instrumental in the progress of their research.
Conclusion
Thomas J McKinnon is a pioneering inventor whose work in ferroelectric memory technology has the potential to revolutionize the field of non-volatile memory devices. His contributions are significant and continue to influence advancements in memory technology.