Orlando, FL, United States of America

Thiet The Lai


Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 124(Granted Patents)


Company Filing History:


Years Active: 2006-2012

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5 patents (USPTO):Explore Patents

Title: Thiet The Lai: Innovator in Semiconductor Technology

Introduction

Thiet The Lai is a prominent inventor based in Orlando, FL, known for his significant contributions to semiconductor technology. With a total of 5 patents to his name, Lai has made remarkable advancements in the field of bipolar junction transistors.

Latest Patents

One of his latest patents focuses on "Multiple doping level bipolar junctions transistors and method for forming." This innovative process involves creating bipolar junction transistors with varying collector doping densities on a semiconductor substrate. The design includes a first group of transistors formed during the creation of a triple well, which provides isolation for complementary metal oxide semiconductor field effect transistors. Additional transistors with different doping densities are produced in a second doping step after the gate stack formation for the field effect transistors. This method allows for the implantation of doping through bipolar transistor emitter windows, resulting in transistors with distinct doping densities and breakdown characteristics. Notably, this invention enables the formation of bipolar junction transistors with six different collector dopant densities.

Career Highlights

Thiet The Lai has established a successful career at Agere Systems Inc., where he has been instrumental in developing cutting-edge semiconductor technologies. His work has significantly impacted the efficiency and performance of electronic devices.

Collaborations

Lai has collaborated with notable colleagues, including Daniel Charles Kerr and Michael Scott Carroll, contributing to various projects that enhance semiconductor technology.

Conclusion

Thiet The Lai's innovative work in semiconductor technology, particularly in bipolar junction transistors, showcases his expertise and dedication to advancing the field. His contributions continue to influence the development of modern electronic devices.

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