Fenouillet, France

Thierry Sicard

This inventor holds 1 USPTO granted patent. Top assignee: Sgs-Microelectronics S.a.. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thierry Sicard. Retrieved from https://idiyas.com/inventor/thierry-sicard-3wutxfzn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Thierry Sicard

Introduction

Thierry Sicard is a notable inventor based in Fenouillet, France. He has made significant contributions to the field of integrated circuits, showcasing his expertise through his innovative patent. His work reflects a deep understanding of electronic engineering and a commitment to advancing technology.

Latest Patents

Thierry Sicard holds a patent for a "Circuit for dynamic isolation of integrated circuits." This dynamic isolation circuit is part of a monolithic integrated circuit that includes both lateral and vertical transistors. The design features lateral transistors isolated by an isolating region connected to an isolating potential (V.sub.iso). These transistors are linked to voltages of a first polarity relative to a reference voltage (GND). The power terminal, connected to the rear face, typically maintains a potential (V.sub.out) of the first polarity relative to the reference voltage. The circuit also includes a sign-detector (D) that detects the sign of the potential of the rear face relative to the reference voltage. It utilizes at least one lateral transistor (S1) to connect the isolating potential to the reference potential when the rear face's potential is of the first polarity. Additionally, it employs at least one vertical transistor (S2) to connect the isolating potential to the rear face's potential when it is of the second polarity relative to the reference potential.

Career Highlights

Thierry Sicard is associated with Sgs-Microelectronics S.A., where he has been able to apply his innovative ideas in a practical setting. His work has contributed to the advancement of integrated circuit technology, making significant strides in the field.

Collaborations

Throughout his career, Thierry has collaborated with talented individuals such as Antoine Pavlin and Marc Simon. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Thierry Sicard's contributions to the field of integrated circuits through his innovative patent demonstrate his expertise and commitment to technological advancement. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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