Theordore D Moustakas

Title: Theordore D Moustakas: Innovator in III-Nitride Semiconductor Technology

Introduction

Theordore D Moustakas is a prominent inventor based in Dover, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of III-nitride materials. His innovative work has led to advancements that are crucial for the development of high-performance electronic devices.

Latest Patents

Moustakas holds a patent for the "Planarization of GaN by photoresist technique using an inductively coupled plasma." This patent describes a method for planarizing films of III-nitride, which are essential for semiconductor device growth. The process involves coating a III-nitride surface with a sacrificial planarization material, such as photoresist, and utilizing dry etch methods to achieve a smooth surface. By carefully matching the etch rates of the materials involved, Moustakas's method results in a planarized III-nitride surface with significantly reduced surface roughness.

Career Highlights

Moustakas is affiliated with Boston University, where he continues to engage in research and development in semiconductor technologies. His work has not only advanced the understanding of III-nitride materials but has also paved the way for their application in various electronic devices.

Collaborations

Moustakas has collaborated with Adrian D Williams, contributing to the advancement of semiconductor technology through shared expertise and innovative research.

Conclusion

Theordore D Moustakas is a key figure in the field of III-nitride semiconductor technology, with a focus on improving the performance and efficiency of electronic devices. His contributions through patents and research continue to influence the industry positively.