Company Filing History:
Years Active: 1982-1992
Title: Thane Smith: Innovator in Semiconductor Technology
Introduction
Thane Smith is a notable inventor based in Middletown, MD (US), recognized for his contributions to semiconductor technology. He holds a total of 3 patents, showcasing his innovative approach to enhancing electronic devices.
Latest Patents
One of Thane Smith's latest patents is the Planar-doped valley field effect transistor (PDVFET). This invention positions more than one two-dimensional electron gas (2DEG) layer within a homo-structure (GaAs) to improve the FET's power output. The FET includes two 2DEG donor planes with an undoped GaAs layer in between, and a n-doped GaAs layer on the other side of each donor plane. Additionally, the FET features a 2DEG acceptor plane below the n-doped GaAs layer, which is furthest from the contacts. This combination of 2DEG planes forms a deep and wide valley in the FET's conduction band, significantly enhancing its power output. Another notable patent is a non-destructive semiconductor wafer probing system that utilizes laser pulses. This system characterizes electrical devices by optically triggering an electrical signal onto the device and then optically sampling the electrical signal waveform.
Career Highlights
Thane Smith has worked with prominent companies in the field, including Comsat Corporation and Communications Satellite Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Throughout his career, Thane has collaborated with talented individuals such as Ho-Chung Huang and Chi Hsiang Lee. These collaborations have further enriched his work and contributed to advancements in the field.
Conclusion
Thane Smith is a distinguished inventor whose work in semiconductor technology has led to significant innovations. His patents reflect a commitment to improving electronic devices and enhancing their performance.