Annaka, Japan

Tetsuro Aoyama

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 2021-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetsuro Aoyama. Retrieved from https://idiyas.com/inventor/tetsuro-aoyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021-2022

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Tetsuro Aoyama: Innovator in Silicon Carbide Crystal Manufacturing

Introduction

Tetsuro Aoyama is a prominent inventor based in Annaka, Japan. He has made significant contributions to the field of materials science, particularly in the manufacturing of silicon carbide (SiC) single crystals. With a total of 2 patents to his name, Aoyama's work has advanced the techniques used in crystal growth, which is crucial for various applications in electronics and optoelectronics.

Latest Patents

Aoyama's latest patents focus on innovative methods for manufacturing silicon carbide single crystals. One of his patents describes a method for manufacturing a SiC single crystal by adjusting the position of a hole in the top of the growth container relative to the off angle of the silicon carbide substrate. This method aims to reduce crystallinity degradation at the wafer's central portion. The growth container surrounds a heat-insulating material, with a seed crystal substrate positioned at the upper portion inside the container. The silicon carbide raw material is located at the lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. The center position hole deviates from the center position of the seed crystal substrate, moving towards the periphery side, allowing for improved growth characteristics.

Another patent by Aoyama also details a method for manufacturing a silicon carbide single crystal, emphasizing the importance of the growth container's design and the positioning of the seed crystal substrate. This method ensures that the direction of the normal vector of the basal plane of the seed substrate is parallel to the main surface, optimizing the growth process.

Career Highlights

Aoyama is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to silicon carbide technology.

Collaborations

Some of Aoyama's notable coworkers include Toru Takahashi and Hitoshi Ikeda. Their collaborative efforts have played a significant role in advancing the research and development of silicon carbide materials.

Conclusion

Tetsuro Aoyama's innovative approaches to silicon carbide single crystal manufacturing have positioned him as a key figure in the field. His patents reflect a deep understanding of the complexities involved in crystal growth, contributing to advancements

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…