Sendai, Japan

Tetsuro Anekawa


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):

Title: Tetsuro Anekawa: Innovator in Magnetoresistance Technology

Introduction

Tetsuro Anekawa is a prominent inventor based in Sendai, Japan. He is known for his significant contributions to the field of magnetoresistance technology. His innovative work has led to advancements in magnetic memory devices, which are crucial for modern electronics.

Latest Patents

Anekawa holds a patent for a magnetoresistance effect element and magnetic memory device. This invention includes a heavy metal layer that extends in a first direction, a recording layer made of ferromagnetic material adjacent to the heavy metal layer, and a barrier layer of insulating material. The design allows for the inversion of magnetization in the recording layer when a current is introduced, enhancing the functionality of magnetic memory devices. He has 1 patent to his name.

Career Highlights

Anekawa is affiliated with Tohoku University, where he has been involved in cutting-edge research and development. His work has not only contributed to academic knowledge but has also had practical applications in the technology sector. His innovative spirit and dedication to research have made him a respected figure in his field.

Collaborations

Throughout his career, Anekawa has collaborated with notable researchers, including Shunsuke Fukami and Chaoling Zhang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Tetsuro Anekawa's contributions to magnetoresistance technology exemplify the impact of innovative thinking in the field of electronics. His work continues to influence the development of advanced magnetic memory devices, showcasing the importance of research and collaboration in driving technological progress.

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