Yokohama, Japan

Tetsuo Ohkawa

This inventor holds 2 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetsuo Ohkawa. Retrieved from https://idiyas.com/inventor/tetsuo-ohkawa-bzc2dykh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2003

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2 patents (USPTO):Explore Patents

Title: Tetsuo Ohkawa: Inventor in Polishing Technology.

Introduction

Tetsuo Ohkawa is an inventor based in Yokohama, Japan, whose work focuses on polishing systems and methods. His listed portfolio includes 2 patents, and his company is Hitachi, Ltd.

Latest Patents

Ohkawa’s listed patents address real-time monitoring and control of polishing processes.

“Polishing system” describes a system that measures friction between a polishing pad and a workpiece using a sensor. A processor uses the friction data and a predetermined function to assess changes in removal rate and evaluate the pad’s polishing efficiency. That evaluation can help determine when to dress the pad and calculate material removed from the workpiece.

“Polishing method” presents the same central approach: using friction measurements collected during polishing to assess removal-rate fluctuations and polishing-pad efficiency. The resulting information can support decisions about pad dressing and workpiece material removal.

Career Highlights

Ohkawa’s listed inventions concern process monitoring in polishing, with an emphasis on using sensor data to inform operational decisions. His work is associated with Hitachi, Ltd.

Collaborations

Hidemi Sato and Hiroyuki Kojima are identified as Ohkawa’s coworkers.

Conclusion

Tetsuo Ohkawa’s listed patent work applies friction sensing and data processing to evaluate polishing performance and guide process control.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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