Osaka, Japan

Tetauya Ueda

This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetauya Ueda. Retrieved from https://idiyas.com/inventor/tetauya-ueda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Tetauya Ueda and Semiconductor Device Innovation.

Introduction

Tetauya Ueda is an inventor associated with Osaka, Japan, and Matsushita Electric Industrial Co., Ltd. His patent work addresses the design and manufacture of semiconductor devices with multilayer metal wiring.

Latest Patents

The available information identifies one patent associated with Ueda: “Semiconductor Device and Its Manufacturing Method.” The invention concerns an integrated circuit with multiple layers of metal wiring separated by interlayer insulating films. It describes using a smaller cutout in a metal wire when the wire should contact a contact formed in a through hole, and a larger cutout when the wire should remain separated from that contact. Ueda is credited with 1 patent in the information provided.

Career Highlights

Ueda’s listed work connects him with Matsushita Electric Industrial Co., Ltd., a company known today as Panasonic Corporation. His patent focuses on how wiring cutouts can control electrical contact within a semiconductor device.

Collaborations

Kousaku Yano is identified as Ueda’s coworker. The provided information does not specify whether they collaborated on the patent.

Conclusion

Tetauya Ueda’s documented patent contribution concerns precise control of connections between metal wiring and contacts in multilayer semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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