Suwa, Japan

Teruo Tagawa


Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2008-2011

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3 patents (USPTO):Explore Patents

Title: Teruo Tagawa: Innovator in Ferroelectric Memory Technology

Introduction

Teruo Tagawa is a prominent inventor based in Suwa, Japan. He has made significant contributions to the field of memory technology, particularly in the development of ferroelectric memory devices. With a total of 3 patents to his name, Tagawa continues to push the boundaries of innovation in this specialized area.

Latest Patents

One of Tagawa's latest patents is focused on a ferroelectric memory device and the method of manufacturing it. This device includes a substrate and a first insulating film that features a plug. The ferroelectric capacitor, which is a key component, is formed above the first insulating film and consists of a lower electrode, a ferroelectric film, and an upper electrode. Additionally, a hydrogen barrier film is incorporated, with varying thicknesses designed to enhance the device's performance. Another patent outlines the method of manufacturing this ferroelectric memory device, emphasizing the importance of the hydrogen barrier film's thickness in relation to the capacitor's structure.

Career Highlights

Teruo Tagawa is currently employed at Seiko Epson Corporation, where he applies his expertise in memory technology. His work has been instrumental in advancing the capabilities of ferroelectric memory devices, which are crucial for various electronic applications.

Collaborations

Throughout his career, Tagawa has collaborated with notable colleagues, including Hiroaki Tamura and Tatsuo Sawasaki. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Teruo Tagawa's contributions to ferroelectric memory technology exemplify his dedication to innovation. His patents and work at Seiko Epson Corporation highlight his role as a key figure in the advancement of memory devices.

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