Tokyo, Japan

Teruo Kisu

This inventor holds 1 USPTO granted patent. Top assignees: Hitachi Ulsi Systems Co., Ltd., Hitachi, Ltd.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Teruo Kisu. Retrieved from https://idiyas.com/inventor/teruo-kisu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Teruo Kisu: Innovator in Semiconductor Technology

Introduction

Teruo Kisu is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Kisu holds a patent for a "Method of manufacturing semiconductor device and semiconductor device." This invention involves a vertical MIS positioned above a trench-type capacitor in a memory cell forming region of a semiconductor substrate. Additionally, a lateral nMIS is integrated into the peripheral circuit forming region of the substrate. The process includes forming the capacitor first, followed by the lateral nMIS, and subsequently the vertical MIS. Furthermore, an isolation part of the peripheral circuit is established after the capacitor formation.

Career Highlights

Throughout his career, Teruo Kisu has worked with prominent companies such as Hitachi, Ltd. and Hitachi ULSI Systems Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor manufacturing.

Collaborations

Kisu has collaborated with notable colleagues, including Hiroshi Kujirai and Masahiro Moniwa. Their joint efforts have contributed to advancements in semiconductor technology.

Conclusion

Teruo Kisu's innovative work in semiconductor devices has made a lasting impact on the industry. His patent reflects his expertise and commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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