Itami, Japan

Tatsuya Nishimoto


Average Co-Inventor Count = 4.4

ph-index = 5

Forward Citations = 206(Granted Patents)


Location History:

  • Itami, JA (1977)
  • Osaka, JP (1981)
  • Kawanishi, JP (1982)
  • Hyogo, JP (1988)
  • Itami, JP (1988 - 2002)

Company Filing History:


Years Active: 1977-2002

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6 patents (USPTO):Explore Patents

Title: **Tatsuya Nishimoto: Innovator in GaN and Copper Processing Technologies**

Introduction

Tatsuya Nishimoto, an inventive force based in Itami, Japan, has made significant contributions to the fields of materials science and manufacturing processes. With a portfolio of six patents, his work focuses primarily on advanced semiconductor substrates and innovative methods for processing metals, notably copper.

Latest Patents

One of Nishimoto's remarkable patents is for a **GaN single crystal substrate and method of producing the same**. This invention describes a process for creating a freestanding gallium nitride (GaN) single crystal substrate through a series of sophisticated steps involving a (111) GaAs single crystal substrate. By utilizing a mask with periodically arranged windows and specific growth techniques, Nishimoto’s method ensures the resulting GaN crystal is larger than 20 mm in diameter and exceeds 0.07 mm in thickness, while being substantially distortion-free.

Another significant patent from Nishimoto focuses on a **method of hot rolling copper**. This invention enhances the longevity of tools used in hot rolling copper or its alloys by introducing tools made primarily of silicon nitride (Si₃N₄) instead of traditional materials. The new method results in improved surface quality of the rolled products and extends the life of the rolling tools remarkably, showcasing his commitment to innovation in material processing.

Career Highlights

Nishimoto has lent his expertise to reputable companies such as Sumitomo Electric Industries, Limited and Rikagaku Kenkyusho. His experience in these organizations has played a crucial role in the development and application of his inventive solutions, allowing him to push the boundaries in the realms of semiconductor materials and metal processing technologies.

Collaborations

Throughout his career, Tatsuya Nishimoto has collaborated with notable professionals including Eiji Kamijo and Ikuji Uemura. These collaborations have not only enriched his work but have also contributed to noteworthy advancements within the industries he serves.

Conclusion

Tatsuya Nishimoto's contributions to innovation, particularly in GaN crystal technology and copper processing, demonstrate his significant impact on materials science. His work is characterized by a commitment to improving product quality and manufacturing efficiency, establishing him as a key inventor in his field and a valuable asset to the companies he has been associated with. As he continues to innovate, the industry can anticipate even more groundbreaking advancements from him in the future.

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