Saitama, Japan

Tatsuya Nakamura

This inventor holds 2 USPTO granted patents. Top assignee: 3M Innovative Properties Company. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuya Nakamura. Retrieved from https://idiyas.com/inventor/tatsuya-nakamura-shr4m61e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2020

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2 patents (USPTO):Explore Patents

Title: Tatsuya Nakamura: Innovator in Conductive Technology

Introduction

Tatsuya Nakamura is a prominent inventor based in Saitama Prefecture, Japan. He has made significant contributions to the field of conductive technology, holding a total of 2 patents. His work is characterized by innovation and practicality, making a notable impact in his industry.

Latest Patents

One of Tatsuya Nakamura's latest inventions is a conductive sticker. This innovative product showcases his ability to merge functionality with cutting-edge technology, providing solutions that are both effective and user-friendly.

Career Highlights

Tatsuya Nakamura is currently employed at 3M Innovative Properties Company, where he continues to develop and refine his inventions. His career is marked by a commitment to advancing technology and improving everyday products through innovation.

Collaborations

Throughout his career, Tatsuya has collaborated with talented individuals such as Satoshi Ishii and Yoshimasa Takeda. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Tatsuya Nakamura is a dedicated inventor whose work in conductive technology has led to significant advancements in the field. His innovative spirit and collaborative efforts continue to inspire those around him.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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